半導體所導師文章數據分析-趙德剛老師
趙德剛，2009年度國家傑出青年科學基金獲得者，2011年第十二屆中國青年科技獎獲得者。主要從事GaN基光電子材料生長與器件研究，尤其是對GaN基紫外探測器的材料生長機理、材料物理及器件物理有較深入的理解和認識。先後研製出高性能的GaN基紫外探測器單元器件、面陣和APD探測器，同時也為實現我國第一支GaN基激光器做出了貢獻。主持和承擔了國家863、973、自然科學基金等多個項目。
2012年至今與合作者共發表了SCI文章106篇，其中趙德剛老師作為第一作者和通訊作者的文章有65篇，文章中有25%發表在以下這些影響因子較高的刊物上：
SCIENTIFIC REPORTS
IEEE JOURNAL OF PHOTOVOLTAICS
JOURNAL OF LIGHTWAVE TECHNOLOGY
CRYSTENGCOMM
APPLIED PHYSICS LETTERS
APPLIED SURFACE SCIENCE
OPTICS EXPRESS
JOURNAL OF ALLOYS AND COMPOUNDS
RSC ADVANCES
APPLIED PHYSICS EXPRESS
JOURNAL OF PHYSICS D-APPLIED PHYSICS
趙德剛老師近五年發表的SCI文章詳細情況（統計數據截止至17年9月25日）
趙德剛老師歷年發表的文章在SCI中近五年被引用的情況（統計數據截止至17年9月25日）
趙德剛老師近五年發表的文章在SCI中被引用情況（統計數據截止至17年9月25日）
近五年趙老師發表的SCI文章中引用較高的前十篇文章
1. Title:Carriers capturing of V-defect and its effect on leakage current andelectroluminescence in InGaN-based light-emitting diodes
By: Le, L. C.; Zhao, D. G.; Jiang, D. S.;et al.
Source: APPLIED PHYSICS LETTERS Volume: 101 Issue: 25 Article Number:252110 Published: DEC 17 2012
2. Title:Suppression of thermal degradation of InGaN/GaN quantum wells in green laserdiode structures during the epitaxial growth
By: Li, Zengcheng; Liu, Jianping; Feng,Meixin; et al.
Source: APPLIED PHYSICS LETTERS Volume: 103 Issue: 15 Article Number:152109 Published: OCT 7 2013
3. Title:Contribution of GaN template to the unexpected Ga atoms incorporated into AlInNepilayers grown under an indium-very-rich condition by metalorganic chemicalvapor deposition (MOCVD)
By: Zhu, J. J.; Fan, Y. M.; Zhang, H.; etal.
Source: JOURNAL OF CRYSTAL GROWTH Volume: 348 Issue: 1 Pages: 25-30 Published: JUN 1 2012
4. Title:Investigation on the compensation effect of residual carbon impurities in lowtemperature grown Mg doped GaN films
By: Yang, J.; Zhao, D. G.; Jiang, D. S.; etal.
Source: JOURNAL OF APPLIED PHYSICS Volume: 115 Issue: 16 Article Number:163704 Published: APR 28 2014
5. Title:Suppression of electron leakage by inserting a thin undoped InGaN layer priorto electron blocking layer in InGaN-based blue-violet laser diodes
By: Le, L. C.; Zhao, D. G.; Jiang, D. S.;et al.
Source: OPTICS EXPRESS Volume: 22 Issue: 10 Pages: 11392-11398 Published: MAY 19 2014
6. Title:Localization effect in green light emitting InGaN/GaN multiple quantum wellswith varying well thickness
By: Liu, W.; Zhao, D. G.; Jiang, D. S.; etal.
Source: JOURNAL OF ALLOYS ANDCOMPOUNDS Volume: 625 Pages: 266-270 Published: MAR 15 2015
7. Title:Effect of V-defects on the performance deterioration of InGaN/GaNmultiple-quantum-well light-emitting diodes with varying barrier layerthickness
By: Le, L. C.; Zhao, D. G.; Jiang, D. S.;et al.
Source: JOURNAL OF APPLIED PHYSICS Volume: 114 Issue: 14 Article Number:143706 Published: OCT 14 2013
8. Title:Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formationof p-type GaN
By: Wu, L. L.; Zhao, D. G.; Jiang, D. S.;et al.
Source: SEMICONDUCTOR SCIENCE ANDTECHNOLOGY Volume: 28 Issue: 10 Article Number: 105020 Published:OCT 2013
9. Title:High efficient GaN-based laser diodes with tunnel junction
By: Feng, M. X.; Liu, J. P.; Zhang, S. M.;et al.
Source: APPLIED PHYSICS LETTERS Volume: 103 Issue: 4 Article Number:043508 Published: JUL 22 2013
10. Title:Control of residual carbon concentration in GaN high electron mobilitytransistor and realization of high-resistance GaN grown by metal-organicchemical vapor deposition
By: He, X. G.; Zhao, D. G.; Jiang, D. S.;et al.
Source:THIN SOLID FILMS Volume: 564 Pages: 135-139 Published: AUG 1 2014
關於趙老師的更多詳細情況參見
http://sourcedb.semi.cas.cn/zw/rczj/yjsds/200907/t20090730_2285673.html
